List of Patents

Granted

1.      An improved RF electrode system for depositing large area uniform hydrogenated silicon film [Indian Patent No.: 239946]

Abstract: An improved RF electrode system for depositing large area uniform hydrogenated silicon films comprising a RF electrode chamber; a set of electrodes which serve as cathodes as well gas injections ; the RF electrode being placed vertically within the chamber ; one substrate on either side of the electrode followed by; one anode after each substrate followed by the system, thus having within the chamber a pan of central electrodes having gas injection holes from both sides with the substrate, anode and heater on either side of each electrode to ensure uniform distribution of the gas mixture within the chamber.

2.      An improved double junction amorphous silicon cell and a method for preparing the same [Indian Patent No.: 235260]

Abstract: There is suggested an improved double junction amorphous silicon solar cell comprising different p and ultra thin n-type silicon alloy films, wherein a ultra thin highly conducting n-type micro-crystalline layer is formed on the intrinsic layer of the top cell and a wide gap ultra thin highly conducting n-type micro-crystalline alloy layer is formed on the intrinsic layer of the bottom cell and a method for the preparation of the same.

Filed

1.      Fabrication of fluorinated n-type silicon oxide films for intermediate and back reflector in thin film solar cells [File No.: 3947/CHE/2013]

Abstract: This invention relates generally to fabrication of thin film semiconductor alloys and more particularly to wide band gap, n-type microcrystalline silicon oxide layers. This invention relates to a method of fabricating the said layers using the same RF PECVD reactor as used for thin-film silicon solar cells. The developed wide band gap fluorinated n-type microcrystalline silicon oxide material provides a cost-effective replacement for aluminium doped zinc oxide for back reflector layers and also provides a more simplified process for the fabrication of thin film solar cells. Controlling the refractive index of fluorinated n-type microcrystalline silicon oxide material by regulating the oxygen content within the film without sacrificing the crystallinity and conductivity enables more light to be reflected back into the active layer of the cell thus resulting in higher short circuit current.

2.      Fabrication of n-type microcrystalline silicon oxide films for use as back reflectors in silicon based thin film solar cells [File No.: 1347/CHE/2013]

Abstract: This invention relates generally to thin film semiconductor alloys and more particularly to wide band gap, n-type microcrystalline semiconductor alloy materials. This invention relates to a method of fabricating n-type microcrystalline SiOx layers using the same RF PECVD reactor as used for thin-film silicon solar cells. The developed n-μc-SiOx:H material provides a cost-effective replacement for Aluminium doped Zinc Oxide for back reflector layers and also provides a more simplified process for the fabrication of thin film solar cells.

3.      Inline plasma system to deposit amorphous silicon thin films for solar cell applications [File No.: 1162/CHE/2009]

Abstract: This invention relates to 'Plasma System' designed to deposit Amorphous Silicon Thin Films on flat surface, like glass for Solar Cells Application. Inline Plasma System for depositing thin films consisting various number of vacuum chambers arranged along with a linear movement path for the mass production. The disadvantageous associated with the existing system are a), occupying large floor space and b). Exceptionally large distance between the loading station and unloading station. In the present invention, the substrate loading station and unloading station is preferred at a distance, as the system is a part of mass production of Amorphous Silicon Solar Modules. The in-line system is one of the equipments used in the mass production of solar modules, and need to have several other equipments which have to be integrated to this system in a well disciplined manner. The concept used in the present invention is well suited to the entire production unit integration.

4.      Enhancement of short circuit current and fill factor by using wide band gap p and n-layers in single junction p-i-n amorphous silicon photo-voltaic cells [File No. 1077/DEL/2002]

Abstract: This invention relates generally to thin film semiconductor alloys and more particularly to wide band gap, n-type microcrystalline and p-type amorphous semiconductor alloy materials. This invention also relates to enhancement of short circuit current density (Jsc) and Fill Factor of amorphous silicon photovoltaic cells incorporating said thin films, wide band gap semiconductor alloy materials.