Thin Film Circuits

Thin film metallization for HMC, thin film circuits, RF/ Microwave etc.

Thin film circuit metallization schemes at HHV are deposited by magnetron sputtering method and the deposited metal layers show excellent adhesion compared to other non vacuum deposition methods.These metallization schemes start with abonding layer of  TiW or Cr and a conductive layer of Au /Cu on the ceramic substrates.

For the resistor applications TaN or NiCr layer and for the solderable applications Ni or Cu is added to the metallization scheme. The sheet resistance of TaN and NiCr layers is a vailable from 10-250Ω/sqr depending upon the application.All layers can be deposited in one cycle without breaking the vacuum by sputtering method.

Class 10,000 clean room is specifically established at HHV for the purpose of depositing defect free metallization coatings.

Applications :

• RF/Microwave integrated circuits
• Hybrid micro circuits
• SAW devices
• RADAR
• Thin film resistors

Standard Metallization Scheme

• Ti : 200 - 800 A^o
• Cr : 200 - 800 A^o
• Ni : 0.1 - 1.0 µm
• TaN or NiCr : 10 - 250 Ω/sqr
• TiW : 200 - 800 A^o
• Cu : 0.5 - 12 µm
• Au : 0.5 - 8 µm
• Al : 150 A^o - 2 µm